A fully depleted NMOS SOI transistor is built and characterized, which exhibits TeraHertz cutoff frequencies. In this work, the design and development of a highly efficient power amplifier circuit is investigated for SOI technology. Fully depleted (FD) SOI transistors offer a nearly ideal behavior for application in analog circuits, particularly in high frequency and low power operation. Finally, a low power and high frequency class E power amplifier is designed based on the SOI transistor, and a full analysis of the performance compared to bulk Si technology is performed.ĪB - The silicon-on-insulator (SOI) technology is one of the most promising technologies as the semiconductor industry shifts to 0.13μm and smaller devices. The device parameters of this transistor are then extracted to build a compact circuit model for use in the PSPICE circuit simulator. N2 - The silicon-on-insulator (SOI) technology is one of the most promising technologies as the semiconductor industry shifts to 0.13μm and smaller devices. T1 - Hierarchical simulation approaches for the design of ultra-fast amplifier circuits
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